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| MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features * These are Pb-Free Devices* MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 45 45 6.5 200 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO-92 CASE 29 STYLE 1 http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. RJA is measured with the device soldered into a typical printed circuit board. MPS A18 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSA18G MPSA18RLRAG MPSA18RLRMG Package TO-92 (Pb-Free) TO-92 (Pb-Free) TO-92 (Pb-Free) Shipping 5000 Units / Bulk 2000/Tape & Reel 2000/Ammo Pack *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 April, 2007 - Rev. 4 Publication Order Number: MPSA18/D MPSA18 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base -Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz) (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz) Equivalent Short Circuit Noise Voltage (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT 100 Ccb - Ceb - NF - - VT - 6.5 - 0.5 4.0 1.5 - nV Hz 5.6 6.5 dB 1.7 3.0 pF 160 - pF MHz hFE 400 500 500 500 VCE(sat) - - VBE(on) - 0.6 0.7 - 0.08 0.2 0.3 Vdc 580 850 1100 1150 - - - 1500 Vdc - V(BR)CEO 45 V(BR)CBO 45 V(BR)EBO 6.5 ICBO - 1.0 50 - - nAdc - - Vdc - - Vdc Vdc Symbol Min Typ Max Unit RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MPSA18 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA en , NOISE VOLTAGE (nV) RS 0 20 RS 0 f = 10 Hz 100 Hz 10 kHz 5.0 30 BANDWIDTH = 1.0 Hz 10 7.0 5.0 10 7.0 1.0 kHz 300 mA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS 0 10 20 10 mA 50 100 200 3.0 mA 1.0 mA 300 mA 100 mA 30 mA 0 10 20 20 16 NF, NOISE FIGURE (dB) Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 100 mA 4.0 10 mA IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 mA 3.0 mA 1.0 mA 300 mA 30 mA 10 mA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0 Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 mA 100 mA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 30 mA 10 mA 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 MPSA18 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 -55 C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) -0.4 -0.8 0.6 VBE @ VCE = 5.0 V -1.2 TJ = 25C to 125C 0.4 -1.6 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 -2.0 -55 C to 25C 20 50 100 50 100 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. "On" Voltages BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C 500 300 200 f T, CURRENT-GAIN 100 70 50 VCE = 5.0 V TJ = 25C 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 MPSA18 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X-X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X-X N 1 DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MPSA18/D |
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